There are presented complex investigation results of proton bombardment influence in two regions und followimgannealing temperature to pin-photodiodes reverse volt-ampear characteristic (at planar n⁺-p-junctions periferia bom-bardment), and alsow to specific resistance profile and thickness and average relative deformation of crystal lattice near test crystals surfase. It is discovered the compensated defect layer in run proton region directly after bombardment, and after annealing at temperatures including 200 oC. After annealing at temperatures 250-300 °C this layer specific resistance fall lower than initial significance, and under this layer compensate region is form. More high temperatures annealing restore initial crystal properties. On this dates ground there is wided work [7] resultes interpretation.

Contens of the "Applied Physics" journal, 2000, N 1