E. K. Huserynov
Institute of Photoelectronics of the Azerbaijan National Academy of Sciences, Baku, Azerbaijan

V. M. Salmanov
Baku State University, Baku, Azerbaijan

The original technology of IR-photodetectors operating on the effect of the signal processing in the element (SРRITE) is considered. In contrast to known of such type devices, in which the narrow near-arranged semiconductor stripes (CdxHg1-xTe) are used as a sensitive element, the structure with quantum wires are applied for consi-dered variant of the device. The offered structure are created on pre-patterned GaAs substrate with the ZnSe and CdTe buffer layers. Above buffers the barrier layer of CdxHg1-xTe with x = 0.85 and the layer of CdxHg1-xTe with x = 0.27 grow by the molecular-beam epitaxy, consecutively, at the condition of preservation of the dimension and number of elements the matrix, recommended by the theory for ensuring of the ensuring of the television standard. Also general analysis of infrared SPRITE-photodetector performance on the basic of structure with quantum wires is carried out.

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