Applied physics
No. 6, 2002

Photoelectronics for new generation of electron-optical equipment

V. P. Ponomarenko, A. M. Filachev

ORION Research-and-Production Association, Moscow, Russia

Results of the latest developments of technologies of photodetectors and photodetective assem-blies including multi-element and matrix ones for IR-spectral range were discussed. Technologies for photodetectors based on CMT photodiodes for thermal imaging equipment operating TDI mode (2ґ256, 4ґ288) or in a "staring" mode (384ґ288) as well as on the basis of photodiodes of indium an-timonide received a large development effort. Technologies for manufacturing of high-speed pho-todetective assemblies for recording of pulse radiation in a wide interval of wavelengths from 0.3 to 11 mm for laser direction finding and metrology are actively developed. An analysis of up-to-date state of photoelectronics was carried out and main physics and technological problems of making photosensitive materials, photosensitive elements, cooling and image processing systems was ob-served.

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