E. Yu. Salayev, D. Sh. Abdinov, K. A. Askerov
Institute of Photoelectronics of the Azerbaijan National Academy of Sciences, Baku, Azerbaijan

The influence of the ionizing irradiation of different kind on the basic parameters, elements, de-signs and constructional materials of photoreceivers on the basis of CdxHg1-xTe solid solution have been investigated. It is established, that the change of the basic parameters of the photoresistors is mainly connected with the change of properties of photosensitive elements. It has been shown that these photoreceivers may me used for operating under high irradiation conditions.

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