Applied physics
N 1, 2003

Temperatures dependence of current transport in Schottky diodes

R. K. Mamedov
Baku State University, Baku, Azerbaijan

   Temperatures dependence of current transport in Ni-nSi Schottky diodes with different diameters (10—1000 mkm) in the temperatures interval 132—387 K Study has shown that satisfactory type an carrent-volteg characteristic of Schottky diodes is saved in limited intervals of temperatures. The particularities of temperatures dependence of barrier height, non-ideality factor, contact resistance, non-dimensional factor and other parameters of Schottky diodes depends on the chosen interval of temperatures and from geometric sizes of contact.

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