Applied physics
N 2, 2003

Trap assisted tunneling in structures with degenerated
n⁺-р-junction on the basis of (CdHg)Te narrow gap alloys

A. Yu. Selyakov, V. P. Ponomarenko
ORION Research-and-Production Association, Moscow, Russia

   Trap assisted tunneling in degenerated n⁺-p HgCdTe junction was analyzed. Approach of single recombination level located in top part of bandgap was used. Recombination rate and differential resistance of p-n-junction R₀A was calculated. It is shown, that when the temperature decrease below some value It take place a changing of transition type controlled the recombination in space charge region. The changing of transition type explain experimentally observable effect of saturation of R₀A temperature dependence in low temperature region.

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