Applied physics
N 2, 2003

Duration of diodes high reverse conduction stage at linear fall of a forward current

P. G. Dermenji, A. N. Dumanevitch, Ju. M. Loktaev, V. Ja. Pavlik
The Lenin’s All-Russian Electrotechnical Institute, Moscow, Russia

   A method of exact numerical-analytical calculation of high reverse conduction stage duration t_s and transient reverse current pulse amplitude Jrrm of diode structure with abrupt р⁺-n- and n⁺-n-junctions has proposed. It was found out that t_s and J_rrm increase (although sublinearly) with increasing of hole lifetime in n-base and rate of fall of forward current. It was shown that dependences of excess holes boundary concentrations in n-base on time are described very exactly by parabolic functions.

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