Applied physics
N 3, 2003

About oppurtunity of photodiods on the ground InSb curry sensitivity rise

V. P. Astakhov, V. V. Karpov, G. S. Solovjоva, A. V. Talimov
Joint-Stock Company «Moscow Plant "Sapphire"», Moscow, Russia

   On the ground of manufactors experiment, in wich varjed initial crystals tipe, ion berillium implantation and postimplantation annealing regimes and also electrolyte type and anodic oxydation regimes at surfase covering, it is showed, that at othe same conditions the application of more highohms crystals results to manufactured InSb photodiodes signals level rise. In is determined the regimes and conditions, at wich photodiodes highest photoelectric parameters level is riches.

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