Applied physics
N 3, 2003

Optimal structure of low backgrоund photodiodes on the basis of narrow gap alloys (CdHg)Te

A. Yu. Selyakov, V. P. Ponomarenko
The ORION Research-and-Production Association, Moscow, Russia

   Trap — assisted tunneling recombination in various strucrure HgCdTe p—n-junction was analized. The optimal structure of HgCdTe p—n-junction what permit to suppress the recombination and the effect of saturation of temperature dependence of differential resistance in low temperature region was proposed.

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