Photosensitivity of quantum well structures, brought up by a method of the OMС-hydride epitaxy, at a normal slope of radiation
V. B. Kulikov, G. Kh. Avetisyan, L. M. Vasilevskaya
PULSAR Scientific & Production Enterprise, Moscow, Russia
I. D. Zalevsky, I. B. Budkin, A. A. Padalitsa
SIGM-PLUS, Inс., Moscow, Russia
Basic successes in the field of development of devices on the basis of quantum well structures (QWS) are bound to usage of the molecular-beam epitaxy (MBE). However recently the gas eputaxy from organometallic compounds (GEOMC) will ever more be utillized. It has the greater productivity than the MBE. Our experience with photodetectors (PD) on the basis of the QWS brought up by a method of the GEOMС displays that such PD have a series of differences from analogs from the QWS brought up by MBE. Sush differences are more essential asymmetry of a volt-ampere characteristic, a presence of a considerable photosensitivity at normal slope of radiation withount the special fittings of the input. The indicated differences are bound, on our view, to features of the GEOMC. The results of experimental examination of the PD on the QWS dasis, which ones are obtained by method of the GEOMC, are submitted in this work. Considered is their connection with features of the QWS stipulated by process of the GEOMC.
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