APPLIED PHYSICS

Isoperiodical Pb_1-xSnxTe(In)/PbTe_1-уSe_у heterojunctions obtained in ultrahigh vacuum

E. Yu. Salaev, I. R. Nuriev, A. M. Nazarov, S. I. Gadjieva
Institute of Photoelectronics National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

   On super high-vacuum installation (≤ 3—5x10^-9 mm Hg), in quasi-equilibrium conditions by the method of "hot wall", in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb_1-xSnxTe(In)/PbTe_1-уSe_у have been received. Polished plates (100) and quick-spalled sides of BaF₂ (111) served as substrates. HJ components represent the ideally coordinated pair for the epitaxy in the structural relation. Volt-amper and spectral characteristics of HJ have been registred. The direct branch of VAC at small displacements submits of the exponential law J = J₀exр(eU/bkТ). At 77 K the coefficient b changes in the interval 1,5—2, that is characteristic for the generation-recombination mechanism of the current flow through the region of the spatial charge. Maximal photosensitivity is observed at l_max= 11,6 micron.

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