Temperatures dependences of current transport through the contact periphery in Schottky diodes
R. K. Mamedov
Baku State university, Baku, Azerbaijan Republic
Temperatures dependence of current transport through contact periphery in Ni—nSi Schottky diodes with different diameters 10—1000 mm in the temperatures interval 222—387 K Study has shown that satisfactory type an current-voltage characteristic of Schottky diodes is saved in limited temperatures intervals. The particularities of temperatures dependence of barrier height, non-ideality factor, contact resistance, non-dimensional factor, widths and active areas of peripheral contact surface and other parameters peripheral contact region Schottky diodes depends on the chosen temperatures intervals.
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