APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 5 Founded in 1994 Moscow 2003


The photoelectric performances of quantum well structures brought up by a method of the OMC-hydride epitaxy and sensitive in the 3—5 mm range

L. M. Vasilevskaya, Yu. A. Kuznetsov, V. B. Kulikov, A. I. Khatuntsev
PULSAR Scientific & Production Enterprise, Moscow, Russia

I. V. Budkin, P. V. Bulaev, I. D. Zalevsky, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovsky
SIGM-PLUS, Inc., Moscow, Russia

   On the basis of InGaAs/AlGaAs system the semiconductor heterostructures with multiple quantum wells for multiple 3—5 mm photodetectors were brought up by the method of the OMC-hydride epitaxy at underpressure. The requirements of increase were optimized for deriving the heterostructures of heightened homogeneity, which are suitable for manufacture of the array PD's. The temperature of increase was 750 °C, the pressure was 60 mm of the Hg high. The manufactured test PD's have demonstrated a detectivity of D*= 5,65·109sm·Hz1/2·W-1 in a maximum of spectral responsivity (lmax= 5,2 mm, Т = 77 К). The obtained results display a potential of usage of such heterostructures for manufacture of arrays with the great many of elements photosensing in 3—5 mm range. The ways of further improving the PD parameters are offered

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