APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 5 Founded in 1994 Moscow 2003


The photoelectric performances of nonrectangular quantum well structures

V. B. Kulikov
Pulsar Scientific & Production Enterprise, Moscow, Russia

I. V. Budkin
Sigm-Plus, Inc., Moscow, Russia

   Models of a well with rectangular and symmetric walls are usually utillized at analytical exposition of basic performances of quantum well structures (QWS), for example, volt-amps diagrams (VAD). However diversions of the experimental performances of actual QWS from analytical dependences allow to make the guess that actual QWS are nonrectangular and even asymmetric. The study of mechanisms of influence of well's unsquareness on the QWS performances would allow to spot methods of neutralization of this influence by introduction of changes in the process of increase. Analytical exposition of the VAD, field dependences of responsivity and the signal to noise ratio of nonrectangular QWS are given in this work. The results of analytical viewing are compared to experimental data. The possible ways of neutralization of influence of well walls unsquareness on the QWS performances have been surveyed.

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