Linear photodetector on the basis of quantum well structures
V. B. Kulikov, L. M. Vasilevskaya, G. Kh. Avetisyan, V. A. Tegay, Yu. I. Zavadsky, A. Kh. Davydov
Pulsar Scientific & Production Enterprise, Moscow, Russia
I. D. Zalevsky, I. V. Budkin
Sigm-Plus, Inc., Moscow, Russia
D. V. Borodin
RTK Impeks, Ltd. , Moscow, Russia
The performances of a multiple photodetector (PD) on the basis of quantum well structures, sensing in the 8—12 mm range, and also spectrums of the PD photosensitivity, its noise properties, resolving ability and others are presented in this article as results of the examination. The PD was manufactured of GaAs/AlGaAs epitaxial structure, brought up by a method of the OMC-hydride epitaxy. The opportunities of improving the performances of the PD have been argued.
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