APPLIED PHYSICS

Radiation defects distribution after ion implantation in MCT structures, grown by a MBE

A. V. Voitsekhovsky, A. P. Kokhanenko, A. G. Korotaev, D. V. Grigor’ev
Siberian Physiko-Technical Institute, Tomsk, Russia

V. S. Varavin, S. A. Dvoretsky, Yu. G. Sidorov, N. Kh. Talipov
Institute of Semiconductor Physics, Novosibirsk, Russia

   In this work the investigations of dose dependences of electrically active defects spatial distribution in MCT epifilms after ion implantation are made. The saturation of dose dependence of layering carrier concentration occurs at a dose of an irradiation 10¹³ cm^-2 and reaches value of concentration N_s~4 x10¹³ cm^-2, that the same for volume material. However, it is found, that an electron concentration in a distribution maximum less than 10¹⁸ cm^-3, but for all ion implantation experiment it was more than 10¹⁸ cm^-3.

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