Temperatures dependence of current transport in Schottky diodes under greater reverse voltages
R. K. Mamedov
Baku State University, Baku, Azerbaijan Republic
The current transport in Ni—nSi Schottky diodes with different diameters (10—1000 mkm) under greater reverse voltages investigated in the temperatures interval 141—387 K. Installed that strong increasing current occurs under comparatively greater voltages, near 10 once smaller true avalanche breakdown voltage, this current consists basically from peripheral currents only and it begins exponential increases with the growing voltage. Determined particularities of temperatures dependency of barrier height, of contact resistance, of non-dimensional factor, widths and areas of active surface and other parameters on peripheries of Schottky diodes.
Contents