Mechanism of creation of the mercury diffusion source in p-Hg1-xCdxTe under ion-beam milling
V. V. Bogoboyashchy
Kremenchuk State Politechnical University, Kremenchuk, Ukraine
I. I. Izhnin
R&D Institute for Materials SRC “Carat”, Lviv, Ukraine
Basing on an analysis of process of the low energy ions Ar+ interaction with surface of p-CdxHg1-xТe at ion-beam milling a mechanism for creation of the mercury diffusion source that ensures a giant rate of the conductivity type conversion revealed at experiment is proposed. The source creation is caused by defect relaxation in the Hg sublattice — doubly charged interstitial atoms and mercury vacancies, and the neutral mercury bi-vacancies obtained in the thermal spike region after ion strike.
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