Dependence of current transport in Schottky diodes of the impurity concentrations of the semiconductor
R. K. Mamedov
Baku State University, Baku, Azerbaijan
Dependencies of current transport in Ni—nSi Schottky diodes with different diameters (10—1000 mm) of the impurity concentrations in interval 3,3·1014—2,5·1017 sm-3 of the silicon at forward and inverse directions was explored. The particularities of concentration dependences of barrier height, non-ideality factor, contact resistance, non-dimensional factor and other electrophysical parameters of Schottky diodes are defined by geometric sizes of contact.
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