Usage of model of independent sources for calculation of distribution of minority carriers generated in a two-layer semiconductor by a electron beam
M. A. Stepovich, M. G. Snopova, A. G. Khokhlov
N. E. Bauman Moscow State Technical University (Kaluga branch), Kaluga, Russia
The computational method of allocations of minority carriers of a charge generated in a two-layer semiconductor by a broad beam coupling with energies 5—30 keV is circumscribed grounded on usage of model of independent sources.
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