HgCdTe photodiodes current-voltage characteristics simulation
K. O. Boltar, N. I. Iakovleva
ORION Research-and-Production Association, Moscow, Russia
Different current mechanisms in HgCdTe p—n junctions have been analyzed. Cur-rent-voltage characteristics of photodiodes in HgCdTe epitaxial layers formed by dif-ferent epitaxial methods are measured and simulated. The numerical simulation of photodiodes current-voltage characteristics allows to evaluate HgCdTe material pa-rameters and improve Focal Plane Arrays technology.
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