Use of ion sources with a wide beam for the decision of microphotoelectronics tasks
А. N. Kozlov, V. D. Smolyaninov, A. P. Eremin
Research Institute for Electron and Ion Optics, Moscow, Russia
А. M. Filachev
ORION Research-and-Production Accociation, Moscow, Russia
The processes of ion-plasma processing in vacuum provide qualitatively high level of the decision of many technological tasks. For formation of film coverings, updating properties of superficial layers, etching, the ion-beam and plasma processing is widely used. For effective application of these methods it is necessary to pay attention to their features connected to physics. First, interaction accelerated, charged particles in vacuum among themselves, secondly, interaction of these particles with products. The efficiency of use of ion-beam sources is completely determined by their principle of action and design features. The forming beams of the large diameter (100, 200 mm and more) are most perspective ion sources. In work the questions of submission of gas are considered at use ion sources in technological ion-beam machine, at a combination with coating and other process equipment. The recommendations of use industrial ion sources in technological machine are given.
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