TlGa1-xFexS2 single crystals as new photodetectors
E. M. Kerimova, S. N. Mustafaeva, S. I. Mekhtieva
Institute of Physics National Academy of Sciences, Baku, Republic of Azerbaijan
Influence of partial substitution of Ga ions in TlGaS2 lattice by Fe ions on photoelectric properties have been investigated. Indicated substitution in quantity of 1÷2 % Fe brings about the full frequency change of photocurrent spectra. Obtained experimental results show that at the expense of partial substitution Ga® Fe in TlGaS2 lattice one can control photocurrent maximum energy of TlGa0,99Fe0,01S2 single crystals from 1.98 to 1.70 eV by temperature variation from 300 to 370 K.
Contents