APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 4 Founded in 1994 Moscow 2004


Features of growth and photoconductivity of epitaxial films of the Pb1-xMnxTe (Ga) solid solutions

I. R. Nuriyev, S. S. Farzaliyev, Kh. D. Djalilova, R. M. Sadigov
Institute of Photoelectronics National Academy of Sciences of Azerbaijan, Baku, Republic of Azerbaijan

   In the present work the features of growth and photoconductivity of epitaxial films of Pb1-xMnxTe (Ga) (0 ≤ х ≤ 0,04) grown on substrates BaF 2 (111, 100) by method of molecular beam condensation are investigated. Is established, that of film with perfect crystal structure (W1/2 = 80—100"), thickness 0.5—1 mm, obtained at speeds of condensation uk = 5—10 °A/s and Тs = 400 °С. Were have obtained high — resistance films n-, p-types of conductivity and is shown, that they are photosensitive. At that the maximum in spectra of photoconductivity is displaced to shorter waves with growth of the contents of manganese in samples (х = 0.01—0.04), that is explained by increase of width of the forbidden band zone.

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