Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride
K. A. Askerov, F. K. Isayev, D. I. Karayev, R. Yu. Aliyev
Institute of Photoelectronics, Azerbaijan National Academy of Sciences, Baku, Republic of Azerbaijan
In the present paper the effect of the factors of the nuclear explosion on the basic parameters of photodiodes, designed on the basis of a layered single crystals of gallium telluride, operating in a spectral range 0.4—1.1 mm has been considered. As a result of conducted investigations it is established that the mean value of time of losses (or restoring) of the efficiency of photodiodes on the basis of gallium telluride under conditions of a pulsing gamma-irradiation and pulsing neutron irradiation equals t ≤ 1.8 s. Results of study of the effect pulsing gamma-irradiation and pulsing neutron-irradiation show that photoreceivers on the basis of GaTe crystals is perspective for systems operating in visible and near IR region.
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