APPLIED PHYSICS

Temperature of BLIP-mode of new type d-doped IR-photodiode

A. Yu. Selyakov
ORION Research-and-Production Association, Moscow, Russia

   Detectivity of new type d-doped IR-photodiode was calculated. It is shown that temperature of BLIP-mode of the photodiode fundamentally larger than those of usual photodiode on the base of p-n-junction from the same semiconductor. Temperature of BLIP-mode of the photodiode on the base of InSb is equal 160 K, at T = 200 K it’s detectivity is equal D* = 3·¹⁰ W^-1 cmHz^1/2, the temperature of BLIP-mode of the photodiode on the base of InAs is equal 195 K, and the temperature of BLIP-mode of the photodiode on the base of InAs_0,88Sb_0,12 is equal 175 K.

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