About a potential distribution in a thin layer of the graded band-gap semiconductor
T. E. Kovalevskaya, V. N. Ovsuk
Institute for Physics of Semiconductors, Novosibirsk, Russia
Method of an estimation of a potential distribution in thin graded band-gap layers of the photosensing semiconductor has been offered. In approximation by a linear graded band-gap the consideration is made to forming the space charge areas in MCT layers for several special cases. Conclusion is made of conditions of forming a "surface" recombi-nation on boundaries of homogeneous and graded band-gap areas.
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