IR-images of InAsSbP flip-chip LEDs in the 3 mm spectral range
A. L. Zakhgeim, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev,
M. A. Remennyi, N. M. Stus’, A. A. Usikova, A. E. Chernyakov
Ioffe Physico-Technical Institute, St.-Petersburg, Russia
We present and analyze IR images of p-InAsSbP/n—InAsSbP/n+—InAs flip-chip LEDs obtained with
and without external lightening (l = 2.9 mm) including those
measured at a reverse and forward bias onto a p-n-junction. Evaluation of the ohmic contact reflectivity and relation
between con-tact and bulk resistance has also been made.
PACS: 85.60.-q
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