APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 1 Founded in 1994 Moscow 2009


GaP р-n-junction investigation at temperatures up to plus 500 oС

V. S. Rudnevsky, V. I. Stafeev
Orion Research-and-Production Association, Moscow, Russia

   Photodiodes based on gallium phosphide with р-n-junction have been investigated. Photosensitivity characteristics within temperature range from minus 183 up to plus 500 oС are represented. The sensitivity peak shifts from 430 to 510 nm with temperature change from minus 183 up to plus 500 oC. From 0.044 up to 0.13 A/W current sensitivity increase is explained by absorption in gallium phosphide at heightened temperatures. The recombination via impurity levels predominates in GaP photodiodes at temperature below 200 oC. The diffusion current appears at temperature more than 200 oC .

PACS: 85.60.Dw

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