APPLIED PHYSICS

Ultimate parameters of multielement hybrid MOS InAs IR FPA and devices based of them

G. L. Kuryshev, 1. 1. Lee, V. M. Bazovkin, N. A. Valisheva, A. A. Guzev, V. M. Efimov, A. P. Kovchavtsev, V. G. Polovinkin, A. S. Stroganov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

   Results of experimental investigation of various linear and matrix hybrid modules and IR systems (a thermography system, IR microscope, and fast spectrograph) based on InAs CID devices are presented.

PACS: 85.60.Gz

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