APPLIED PHYSICS

The technological operation processes for fabrication of monolithic integrated IR detectors

M. V. Yakushev, V. V. Vasiliev, S. A. Dvoretsky, T. I. Zahariyash, A. I. Kozlov, Yu. G. Sidorov, B. I. Fomin, A. L. Aseev
A. V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia

A. V. Vinogradov
URBVT&SP, Moscow, Russia

E. V. Degtyarev
The 22-nd Central Research Institute, Mytishci, Russia

   We discuss the separates technology elements of fabricating of monolithic integrated HgCdTe infrared detectors. The following processes were investigated: 1 — ROIC and FPA models on (013)Si; 2 — the stability of ROIC to thermal annealing in vaccum; 3 — the development of low temperature thermal annealing of surface Si(310) substrate before epitaxial growth; 4 — the selective CdTe and HgCdTe growth onto Si(310) surface in SiO₂ windows of different sizes; 5 — the development of mesa technology and In contacts to the top of mesa. The results show the possibility to development the whole technology of fabricating monolithic integrated focal plane arrays on the basis of photo-sensitive diodes grown in windows of ROIC.

PACS: 07.57.Kp

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