APPLIED PHYSICS

GaP Shottky photodiodes properties at high temperatures

V. S. Rudnevsky, V. I. Stafeev
Orion Research-and-Production Association, Moscow, Russia

   Shottky Photodiodes Au—n-GaP (Au thickness is 10 nm) have been investigated at high temperatures. Photodiode resistivity grows irreversible at a temperature above 70 ^oC. Annealing at 125 ^oC can increase photodiodes quantum efficiency up to 66 %. Limiting temperature for such photodiodes is 300 ^oC. The photodiode degradation with temperature is related to Au-film structure on a semiconductor surface change.

PACS: 85.60.Dw; 85.-60.-q

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