APPLIED PHYSICSTHE SCIENTIFIC AND TECHNICAL JOURNAL
About one problem of the identification of parameters direct gap semiconductors on dependencies of the intensities monochromatic cathodoluminescence from electron beam energy A. N. Polyakov, M. A. Stepovich, E. N. Lapshinova Yu. E. Gagarin N. N. Miheev
The problem of identification of parameters direct gap semiconductors is considered at use of dependence of
intensity monochromatic cathodoluminescence from electron beam energy and realization of low level of excitation of
a signal. It is shown, that realization of a method of the least squares leads to system of the nonlinear algebraic
equations which decision essentially depends on a choice of initial approach. Taking into account it some conditions
of correct processing of experi-mental data for identification of required parameters of semiconductors are defined.
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