PRIKLADNAYA FIZIKA
(Applied Physics)
The Scientific and Technical Journal
2011, No. 4 |
Founded in 1994. |
Moscow |
CONTENTS
GENERAL PHYSICS
PLASMA PHYSICS AND PLASMA TECHNOLOGIES
ELECTRON AND ION BEAMS
Bondareva T. V., Krylov V. I.
Bremsstrahlung of charged partiсles, which take place through a stratum of scattering centres placed in an external electric field
| | 52 |
PHOTOELECTRONICS: ELEMENTAL BASE
AND TECHNOLOGY
Savkina R. K., Sizov F. F., Smirnov A. V., Deriglazov V. A., Yakushev M. V.
The IR uncooled photovoltaic cell on basis of CdхHg1-хTe/Si (х = 0,3)
| | 58 |
Patrashin A. I.
IR array photodetector with the cold stop
| | 65 |
Khromov S. S., Zaitsev A. A.
The Calibre xRC extraction and post layout simulation of FPA ROIC
| | 72 |
Arakelov G. A., Samvelov A. V.
Thermoelectric thermostabilization of the IR microbolometric arrays
|
| 76 |
Berchenko N. N., Yelizarov A. I.
Analysis techniques for the evaluation of HgCdTe multicarrier transport parameters
| | 79 |
Gorelik L. I., Solyakov V. N., Trenin D. Yu.
Low contrast dual-band infrared image processing
| | 88 |
Solyakov V. N., Korneeva M. D., Kortikov M. V., Kataev O. V., Trunov G. L., Solomakhin P. A.
Picture signals former on the base of the InSb 320x256 FPA
| | 96 |
Kostyukov E. V., Pospelova M. A., Rusak T. F., Vasiliev Yu. B., Petlitski A. N., Turtsevich A. S.
Features of
the internal getter formation for CCD in 150-mm wafers made of silicon with more perfect structure
| | 99 |
PHYSICAL EQUIPMENT
Contents of another issues
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