APPLIED PHYSICS

THE SCIENTIFIC AND TECHNICAL JOURNAL


No. 2 Founded in 1994 Moscow 1995


SEMICONDUCTOR DIODE LASERS

I. S. Baikov
The All-Russia Research Institute of Interbranch Information, Moscow, Russia

V. V. Bezotosny
P. N. Lebedev Institute of Physics, RAS, Moscow, Russia

   The review contains brief information about the main scientific and industrial centers in Russia, engaged in the development and production of semiconductor injection lasers. Modern directions of fundamental and applied works are submitted, including the injection lasers on the base of quantum wells, nanostructues and stressed geterolayers. Series of publications, directed on the development of injection lasers in new spectral regions, high-power single-mode operation, ultrashort laser pulses generation and high-power laser arrays for solid-state active material pumping are examined. Associated reference information on the nomenclature of industrial-type injection lasers, light-emitting modules for fiber-optic communications and high-power light emitting diodes is presented.

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