NUMERICAL SIMULATION OF HOT ELECTRON FIELD EMISSION FROM SILICON MICROCATHODE

Numerical simulation of hot electron field emission from silicon microcathode

V. A. Fedirko¹, Yu. N. Karamzin², S. V. Polyakov², and I.G. Zakharova²

1) Moscow State University of technology “Stankin”

^{2) Institute for Mathematical Modelling RAN

Two-dimensional quasi-hydrodynamic model of hot electron field emission from silicon microcathode is developed. An original numerical method is suggested which ensures the conservatism and the weak monotony of a finite difference decision. The steady-state of the emitting cathode have been simulated. The results are essential for the vacuum microelectronics technology of effective silicon field emitter arrays.}