InSb-photodetectors with very-low-level dark current

DEVELOPMENTS IN InSb-PHOTODETECTORS WITH VERY-LOW-LEVEL DARK CURRENT
FOR USE IN HIGH PERFORMANCE IR CCDs

V.P. Astakhov, D.A. Gindin, V.V. Karpov, G.S. Solovjeva, A.V. Talimov
Joint Stock Company "Moscovskiy Zavod "Sapfir", Moscow, Russia
Yu.R. Vinetski, A.G. Titov, V.I. Famitski
State Unitary Enterprise "RD&P Center "Orion", Moscow, Russia

ABSTRACT

The results are presented of technological investigations in basic technology so as very low dark current level ^<_-3^*10^-11A of the photodetectors is achievable. The results permits InSb photodetectors to be used effectively in low-background 3....5 mkm band systems to realize close-to-back ground-limited performance.