ABOUT INFLUENCE OF SURFACE CANAL RESISTANCE ON QUADRANT p-i-n-PHOTODIODES DARK CURRENT

V.P. Astakhov, D.A. Gindin, V.V. Karpov, K.V. Sorokin
Joint Stock Company "Moscovskiy Zavod "Sapfir", Moscow, Russia

ABSTRACT

       There is the presentation of experimental results of surfase canal resistance value effect on electrical and photoelectrical characteristics of large square p-i-n-photodiodes with guard ring, fabricated from p-type silicon with specific resistance 20~kOhm*sm. The authors investigated and made analysis of the effect of canal resistance on both, photosensitive squares and quard ring dark currents, and, photoelectric correlation coefficient and watt-ampere characteristics, for extensive range of values. Authors found the optimal mean of surface canal resistance for p-i-n-photodiodes and stand the requirements to its value on different parts of the surface topological picture, if it would be nesessary for improvement of devices`s characteristics.