S.Y. Andrushin, Y.P. Butrov, E.R. Globus, L.I. Nesterova,
Y.N. Sorokina, P.E. Hakuashev
State Unitary Enterprise "RD&P Center "Orion", Moscow, Russia
The uncoold two-channel photodetector device (PDD) with the silicon photodiode and lead sulfid film photoresistor is developed. The photodiode channel is supplied by the ampifier 744“„1Ђ-1 and has NEP above 1,5 x 10-10W/Hz1/2 for a source A (T=2860 degrees Celsius). NEP of photoresistor does not exceed 1,3 x 10-9W/sm/Hz1/2 for back body with temperature 300 degrees Celsius. PDD is characterized by high accuracy of the arrangement of the photodiode, photoresistor and immersion lens of the rather landing diameter of the device.