CIRCUIT ENGINEERING OF MULTI-ELEMENT PHOTODETECTIVE ASSEMBLIES
BASED ON LEAD CHALCOGENIDES

V.D. Bochkov, I.I. Voropayev, M.L. Khrapunov
State Unitary Enterprise "RD&P Center "Orion", Moscow, Russia

ABSTRACT

       At present works are carrying out making multichannel photodetective assemblies, operating in 3-5 micron specral range made on the of high-sensitive cooled hybrid photomodules (PMs) including multi-element photosensitive element (PSE), multiplexers and a cooler (e.g.) termoelectric coolers (TECs).
        Application of such PMs allows to make better weight and size parameters of optoelectronic equipment, to decrease power consumption, to decrease cost and works hous of making photodetective assemblies (PDAs).
        Signals communitation in PMs is realizes with the help of multiplexers-large integrated circuits without packages winh input preamplifiers.
        For achievement of maximum detectivity of such photomodules parameters of PSEs and multiplexers must be mutually agreed.
        Subjects of developing and studing multiplexers for their optimal mating with PbSe photoresistor were discussed in paper, requirements for photoresistor parameters and characteristics of the multiplexer providing realization of photomodule detecivity were determined.