GaAs-BASED HETEROEPITAÕIAL STRUCTURES FOR THE SPECTRAL RANGE UP TO 1,1 mkm

L. G. Zabelina, A. S. Ðetrov

Electron Central Research Institute, St.-Petersburg, Russia

The paper shows that Electron NRI has been developed photosensitive devices on the base of the negative—electron—affinity photocathodes (NEAPhC) with A3B5 structures sensitive in the spectral range from 0,35 to 1,1 mkm for a long time. The homoepitaxial GaAs(Ge) — structures underlay the quantocon PMT family (the 155, 156, 157 PMTs) featuring the luminous sensitivity from 700 to 1200 mkA/lm in the spectral range up to 0,9 mkm. The produced NEAPhC with the In0,18Ga0,82As—GaAs structures underlay the developed PMTs featuring the spectral response range from 0,35 to 1,1 mkm, the quantume yield from 0,5 to 2 % with the wavelength of 1,06 mkm. The semitransparent on-glass NEAPhCs based on the GaAs— AlxGa1-xAs epitaxial structures grown with the MOCVD method showed the luminous sensitivity 500—1500 mkA/lm in spectral range from 0,5 to 0,9 mkm. It is shown that with the purpose of extending the spectral response range for the semitransparents NEARhC up to the wavelength of 1,1 mkm for an application for night vision devices, the structures with the In0,18Ga0,82As active layer compound can be used.