In present work high efficient and firm extruded material on the base of Bi_0,85Sb_0,85 solid solutions are obtained for low temperature coolers. Thermo- and magnetothermoelectric figures of merit of developing material are sufficiently high and close to those for the monocrystalline samples, but firmness on bending in ~ 3 times exceeds firmness of monocrystalline samples. When doping samples Bi_0,85Sb_0,15 with 0,0005 at. % Te Z grows and reaches values 6,2 10^-3 K^-1. Magnetothermoelectrical figure of merit (Zmte) Bi_0,85Sb_0,15 solid solutions, doped with 0,0005 at. % Te at the temperature ~ 77 K and intensity of magnetic field ~ 11 10⁴ A/m, has a value equal ~ 7,2 10^-3 K^-1. It is shown that under doping of the samples Bi_0,85Sb_0,15 by atoms with the concentration 0,05 at. % and more, changing a type of conductivity from electronic to hole occurs at temperatures below ~ 130 K, that leads to inversions of sign of factors coefficients a and R_H Z for the samples of p-type conductivity reaches values ~ 0,84 10^-3 K^-1 at ~ 77 K.