The influence of ionizing irradiation of different kind—imitation factors of nuclear explosion and proton irradiation on photoelectrical proprties of photodiodes on the base of indium selenide have been investigated. Photoreceivers were exposed to ionizing irradiation of following kinds: influence of damaging factors of nuclear explosion with neutrons energy of En > 0,1 MeV and fluency of 3 10¹² cm^-2 and— pulse gamma-irradiation of power 1 10¹⁰ R/s; influence of proton irradiation with fluency 5 10¹³ cm^-2. It is shown that pulse gamma- and neutron-irradiation essentially acts monochromatic and volt-watt sensitivities of photodiodes, increasing them about 20—40 %. In short-wave region of spectrum significant increasing is observed, while sharp decreasing in sensitivity in long-ware region occurs. Non uniformity of amplitude-frequency characteristics increases up to 40 - 65 %. This fact is explained by the widening of space charge region in photodiodes. This results to decreasing the capacity of p-n-junction and widening of transmission band. Results obtained may be used for the fabrication of photodiodes, operating in near IR-region of spectrum.