There is presentation of investigation results of volf-ampers characters (VAC) planar ion-dopted and diffused pin-diodes with and withought guard ring. It is shown, that planar n⁺-p junctions periferia of Ar⁺ or N₂⁺ ions implantation with energy 100 keV and doses more then threshold value, individual for every dopted method changes and straight and reverse branch of VAC inside "ideal": the straight branch unideality as I - Uⁿ, - to 0,5. Cardinal improvements is observed in both typs structures-with and withought guard ring. By it ion-dopted and "badly" diffused structures VAC becomes corresponding to best Moscow plant "Sapfir" diffused pin-photodiodes VAC.

Contens of the "Applied Physics" journal, 1999, N 6