PRIKLADNAYA FIZIKA
(APPLIED PHYSICS)

The scientific and technical journal
Founded in 1994


Russian
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Top 10 Articles (Downloadings)
August, 2018



1. Ivanov E.V., Moshkunov S.I., Khomich V.Yu. High voltage nanosecond pulse generator basing on combined solid state switch // Prikladnaya Fizika. 2006. No. 2. P. 122

2. S. A. Zhukova, V. E. Turkov, S. A. Demin, and B. V. Troshin Microbolometer detector that is sensitive in two spectral bands // Prikladnaya Fizika. 2016. No. 4. P. 67

3. Lyashenko A. V., Eremin V. P., Toreev A. I. Millimeter-wave amplifier devices of type-O // Prikladnaya Fizika. 2009. No. 5. P. 119

4. V. P. Arkhipov, I. A. Zhelaev, A. B. Ivashkin, A. S. Kamrukov, and K. A. Semenov Multispectral photoelectric converters for measuring the radiative characteristics of pulsed broadband optical radiation sources // Prikladnaya Fizika. 2017. No. 3. P. 107

5. S. S. Demidov, E. A. Klimanov, T. G. Kolesnilova, and A. A. Smirnov Influence of transition elements impurities on dark currents of the silicon photodiodes // Prikladnaya Fizika. 2014. No. 1. P. 68

6. Yusupaliev U., Radomsky N. V., Shuteev S. А., Kokovin V. A., Yusupaliev P. U. Measurement of short time interval for the system "laser-time position sensitive detector of radiation" // Prikladnaya Fizika. 2009. No. 5. P. 113

7. Zakamov V. R., Chechenin Yu. I. Low-barrier Schottky detector diode of silicon structures doped with antimony // Prikladnaya Fizika. 2012. No. 3. P. 101

8. V. M. Akimov, D. S. Andreev, S. S. Demidov, N. A. Irodov, and E. A. Klimanov The current-voltage characteristics of photodiodes of the planar type FPA based on p-InP/InGaAs/n-InP structure // Prikladnaya Fizika. 2014. No. 5. P. 50

9. D. V. Borodin, Yu. V. Osipov, and V. V. Vasil'ev CMOS image sensor with 1280x1024 pixels and 13x13 μm pitch // Prikladnaya Fizika. 2016. No. 2. P. 76

10. V.M. Belokonev, V.G. Volkov, V.L. Salikov, and B.A. Sluchak Laser television device
// Prikladnaya Fizika. 2013. No. 4. P. 16


Top 10 Articles (Downloadings)
January, 2018



1. D. V. Borodin, Yu. V. Osipov, and V. V. Vasil'ev CMOS image sensor with 1280x1024 pixels and 13x13 μm pitch // Prikladnaya Fizika. 2016. No. 2. P. 76

2. A. V. Nikonov and N. I. Iakovleva Analysis of CdHgTe multilayer heterostructures on the basis if IR transmission spectra // Prikladnaya Fizika. 2017. No. 5. P. 64

3. Dem'yanenko M. A., Fomin B. I., Vasil'ieva L. L., Volkov C. A., Marchishin I. V., Esaev D. G., Ovsyuk V. N., Dshhunjan V. L., Volodin E. B., Ermolov A. V., Usov P. P., Chesnokov V. P., Chetverov Y. S., Kudriavtsev P. N., Zdobnikov A. E., Ignatov А. А. 320x240 uncooled microbolometer IR FPA and sensor on basis of sol-gel VOx // Prikladnaya Fizika. 2010. No. 4. P. 124

4. Ivanov E.V., Moshkunov S.I., Khomich V.Yu. High voltage nanosecond pulse generator basing on combined solid state switch // Prikladnaya Fizika. 2006. No. 2. P. 122

5. Lyashenko A. V., Eremin V. P., Toreev A. I. Millimeter-wave amplifier devices type-O // Prikladnaya Fizika. 2009. No. 5. P. 119

6. Yusupaliev U., Radomsky N. V., Shuteev S. А., Kokovin V. A., Yusupaliev P. U. Measurement of short time interval for the system "laser-time position sensitive detector of radiation" // Prikladnaya Fizika. 2009. No. 5. P. 113

7. S. A. Zhukova, V. E. Turkov, S. A. Demin, and B. V. Troshin Microbolometer detector that is sensitive in two spectral bands // Prikladnaya Fizika. 2016. No. 4. P. 67

8. A. V. Voitsekhovskii, A. P. Kokhanenko, and K. A. Lozovoy Dark current and detectivity of photodetectors with quantum dots of germanium on silicon // Prikladnaya Fizika. 2016. No. 6. P. 42

9. A. L. Dudin, N. I. Katsavets, D. M. Krasovitsky, S. V. Kokin, V. P. Chaly , and I. V. Shukov InGaAs/AlGaAs QWIP heterostructures for the large format 3-5 μm focal plane arrays // Prikladnaya Fizika. 2016. No. 6. P. 49

10. K. O. Boltar, I. D. Burlakov, P. V. Vlasov, A. A. Lopukhin, V. P. Chaliy, and N. I. Katsavec Features of a FPA on the base of the LWIR QWIP 384x288 detectors CdTe/Al2O3
// Prikladnaya Fizika. 2016. No. 2. P. 37