Ion-doped diode structures on n-silicon,
produced in serial manufacture conditions

V. P. Astakhov, D. A. Gindin, E. F. Karpenko, V. V. Karpov, T. M. Sokolova, K. V. Sorokin
Joint-Stoc Company "Moscovsky Zavod "Sapfir"", Russia

There is presented investigation results of planar ion-doped p+nn+-structures on n-silicon with different doped level forvard and reverse volt-ampear characteristics (VAC). It is showed, that for such structures definite influence to VAC render quality initial slace surface cultivation, and implantation of planar p+-n junctions periphery N2+ ions is the effective means for removal of the surfase influence to VAC, approaching and forvard and reverse branchs to "ideal". By it ion-doped structures VAC becomes according to VAC of diffusion analogs, producing in conditions of JSC "Moscovsky Zavod "Sapfir"" manufacture.

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