High-temperature magnetothermoelectrical extruded material on the basis of Bi85Sb15 solid solution

M. M. Tagiyev
Institute of Photoelectronics of the Azerbaijan Academy of Sciences, Baku, Azerbaijan

High effectiv and sufficiently firm materials on the basis of the Bi85Sb15 solid solution doped by Pb impurites have been obtained and investigated. It is shown, that with growth of a doping degree values of thermoelectrical figure of merit (Z) at first grows up to 0,005 at. % Pb of and at this concentration reaches value equal ~5,0·10–3 K–1 at ~200 K, and then decreases. In a magnetic field the greatest values of Z for the samples of p-type has one doped by 0,05 at. of % Pb, and Z reaches value ~0,84·10–3 K–1 at ~80 K.

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