An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal—semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4—10 A/cm² and 30—150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10¹⁸ cm^-3.