Uncooled рhotoresistors on the basis of CdxHg1-xTe (x = 0,24)

F. N. Gaziyev, Sh. M. Guliyev, E. U. Salayev
Institute of Photoelectronics of Azerbaijan Academy of Sciences, Baku, Azerbaijan

Uncooled CdxHg1-xTe (x = 0,24) photoresistors ( lmax ~ 5 mm) have been investigated theoretically and experimentally. Basic photoelectrical parameters (voltage response, detectivity) of the photoresistors were calculated as function of doping level. The theoretical prediction is cоmpared with experimental data. The photoelectric parameters of the uncooled photoresistors prepared for 2-6 mkm spectral diapason are shown as well.

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