Applied physics
No. 3, 2001

Investigation of change of Ni properties
during blistering by stochastic analogue

A.L. Bondareva, G.I. Zmievsksya
V.V. Keldysh Institute of Applied Mathematics RAS, Moscow, Russia

   Stochastic simulation of fluctuation stage of high-temperature blistering on Ni under the influence of He ions is examined in this article. Using method allows to obtain such characteristics as porosity all sample and its layers; spectrum of fliker-noise; tensions in surface layer, which are created by blisters; two-dimensional and one-dimensional distribution functions of clusters as functions from bubble size and bubble position in metal Lattice; middle size of clusters and its dispersions.